IXGH28N60B3D1 IXYS IGBT Transistors (Datasheet) Reviews

IXGH28N60B3D1 IXYS IGBT Transistors (Datasheet) Reviews

Product Information IXGH28N60B3D1 IXYS

Part: IXGH28N60B3D1

Brand: IXYS

Configuration: Single 

Collector- Emitter Voltage VCEO Max: 600 V 

Collector-Emitter Saturation Voltage: 1.5 V 

Continuous Collector Current at 25 C: 66 A 

Gate-Emitter Leakage Current: +/- 100 nA 

Power Dissipation: 190 W 

Maximum Operating Temperature: + 150 C 

Package / Case: TO-247 

Packaging: Tube 

Continuous Collector Current Ic Max: 150 A 

Minimum Operating Temperature: - 55 C 

Mounting Style: Through Hole

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